N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 50A,RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
CEP6060L/CEB6060L
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60
Units V V A A A W W/ C C
±16
50 35 200 100 0.8 -65 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.5 62.5 Units C/W C/W
Details are subject to change without notice . 1
Rev 2. 2011.Jan http://www.cetsemi.com
CEP6060L/CEB6060L
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 50A 0.8 VDS = 48V, ID =48A, VGS = 10V VDD = 30V, ID = 48A, VGS = 5V, RGEN = 15Ω 15 4.5 124 22 45 4.6 9 50 1.3 19.5 5.9 161.2 28.6 58.5 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 1480 300 50 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 24A VGS = 5V , ID = 24A 1 1.4 15 19 2 20 25 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 16V, VDS = 0V VGS = -16V, VDS = 0V 60 25 100 -100 V
µA
Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
2
CEP6060L/CEB6060L
40 VGS=10,8,7,6,5,4V 100 25 C
ID, Drain Current (A)
30
ID, Drain Current (A)
75
20
VGS=3V
50
10
25
TJ=125 C
-55 C 4 6
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
2
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
3000 2500 2000 1500 1000 500 0 Coss Crss 0 5 10 15 20 25 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=24A VGS=5V
Ciss
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
2
VTH, Normalized Gate-Source Threshold Voltage
ID=250µA
10
1
-25
0
25
50
75
100
125
150
10
0
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP6060L/CEB6060L
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=48V ID=48A
RDS(ON)Limit
ID, Drain Current (A)
10
2
100ms 1ms 10
1
10ms DC TC=25 C TJ=175 C Single Pulse 10
0
0
12
24
36
48
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve
4