CEB9060N

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP9060N CEB9060N CEF9060N VDSS 55V 55V 55V RDS(ON) 10.5mΩ 10.5mΩ 10.5mΩ ID 90A 90A 90A e CEP9060N/CEB9060N CEF9060N @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G G CEP SERIES TO-220 D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F VDS VGS ID IDM PD EAS IAS TJ,Tstg f Units V V 55 ±20 90 360 166 1.11 325 50 -55 to 175 90 49 0.33 325 50 e e A A W W/ C mJ A C 360 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.9 62.5 Limit 3 65 Units C/W C/W Details are subject to change without notice . 1 Rev 4. 2007.Oct. http://www.cetsemi.com CEP9060N/CEB9060N CEF9060N Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 62A VDS = 44V, ID = 62A, VGS = 10V VDD = 28V, ID = 62A, VGS = 10V, RGEN = 4.5Ω 24 11.9 60 19 68.1 12.6 22.7 62 1.3 48 23.8 120 38 90.5 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 55V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 62A VDS = 25V, ID = 62A 2 8.5 30 3695 765 60 Min 55 25 100 -100 4 10.5 Typ Max Units V µA 4 nA nA V mΩ S pF pF pF VDS = 25V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 260µH, IAS = 50A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . 2 CEP9060N/CEB9060N CEF9060N 120 100 80 60 40 20 0 0.0 VGS=10,8,7V 120 100 80 60 40 25 C 20 0 TJ=125 C 1 2 3 4 5 -55 C 6 7 ID, Drain Current (A) VGS=6V VGS=5V 0.5 1.0 1.5 2.0 2.5 3.0 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 4800 4000 3200 2400 1600 800 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=62A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 2 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 1 -25 0 25 50 75 100 125 150 10 0 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP9060N/CEB9060N CEF9060N VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=44V ID=62A 10 3 ID, Drain Current (A) RDS(ON)Limit 10 2 4 100ms 1ms 10ms DC 10 1 0 12 24 36 48 60 72 10 0 TC=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4