N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED02N7G/CEU02N7G
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 700
Units V V A A A W W/ C mJ A C
±30
1.6 1.1 6.4 48 0.38 11.25 1.5 -55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.6 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 4. 2011.Jan http://www.cetsemi.com
CED02N7G/CEU02N7G
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 480V, ID = 1.9A, VGS = 10V VDD = 300V, ID = 1.9A, VGS = 10V, RGEN = 18Ω 14 12.5 23 10 9 1.5 5 1.6 1.5 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 50V, ID = 1A VDS = 25V, VGS = 0V, f = 1.0 MHz 1.5 315 55 20 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 1A 2 5.4 4 6.75 V Ω BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V 700 25 100 -100 V
µA
Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =10mH, IAS =1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
CED02N7G/CEU02N7G
6 5 4 3 2 1 0 3.0 2.5 2.0 1.5 1.0 0.5 0
ID, Drain Current (A)
VGS=6V
ID, Drain Current (A)
VGS=10,9,8,7V
VGS=5V
25 C
TJ=125C 0 1.5 3.0 4.5
-55 C 6.0 7.5
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
600 500 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=1.6A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
10
1
VTH, Normalized Gate-Source Threshold Voltage
IS, Source-drain current (A)
ID=250µA
VGS=0V
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CED02N7G/CEU02N7G
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=480V ID=1.9A 10
1
RDS(ON)Limit
ID, Drain Current (A)
100ms 1ms 10ms DC
10
0
10
-1
0
3
6
9
12
10
-2
TC=25 C TJ=175 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4