CED50N06/CEU50N06
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 36A , RDS(ON) = 18mΩ(typ) @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60
Units V V A A W W/ C C
±20
36 105 68 0.45 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.2 50 Units C/W C/W
Details are subject to change without notice . 6 - 66
Rev 1. 2006.Oct http://www.cetsemi.com
CED50N06/CEU50N06
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 15A VDS = 48V, ID = 36A, VGS = 10V VDD = 30V, ID = 36A, VGS = 10V, RGEN = 3.6Ω 21 13 40 9 31 8 13 35 1.5 45 33 80 27 40 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 15A 2 18 4 23 V mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 60 1 100 -100 V
µA
Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
6
gFS Ciss Coss Crss
VDS = 10V, ID = 15A VDS = 25V, VGS = 0V, f = 1.0 MHz
15 1278 430 80
S pF pF pF
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
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CED50N06/CEU50N06
120 125
VGS=10V
25 C
ID, Drain Current (A)
80
VGS=7V
60 40 20 0 0 1 2 3 4 5 6
ID, Drain Current (A)
100
VGS=8V
100
75
VGS=6V VGS=5V VGS=4V
50
25 TJ=125 C 0 0 2 4 6 8 10 -55 C
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1800 1500 Ciss 1200 900 600 300 Crss 0 0 5 10 15 20 25 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
Coss
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=15A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
25 50 75 100 125 150
10
10
0
10 -25 0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
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CED50N06/CEU50N06
VGS, Gate to Source Voltage (V)
15 V =48V DS ID=36A 10
3
ID, Drain Current (A)
12 9 6 3 0
10
2
RDS(ON)Limit
100ms 1ms 10ms DC
10
1
10
0
0
10
20
30
40
10
-1
TC=25 C TJ=175 C Single Pulse 10
-2
6
10
0
10
-1
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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