N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON) 9.3Ω 9.3Ω 9.3Ω ID 1A 1A 1A d @VGS 10V 10V 10V
CEP01N6G/CEB01N6G CEF01N6G
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
D
G
G D S G
CEP SERIES TO-220
S CEB SERIES TO-263(DD-PAK)
G
D
S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg
e
TO-220F
Units V V
600
±30
1 4 41 0.33 -55 to 150 1 4
d d
A A W W/ C C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
27 0.22
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 3 62.5 Limit 4.5 65 Units C/W C/W
Details are subject to change without notice . 1
Rev 1. 2009.July http://www.cetsemi.com
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b
CEP01N6G/CEB01N6G CEF01N6G
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.6A 2 7.3 Min 600 20 100 -100 4 9.3 Typ Max Units V
µA
4
nA nA V Ω
gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD
VDS = 15V, ID = 0.5A VDS = 25V, VGS = 0V, f = 1.0 MHz 210 55 25 20 11 26 18.5 VDS = 300V, ID = 1A, VGS = 10V 7.2 1.7 4
10
S pF pF pF
VDD = 300V, ID = 1A, VGS = 10V, RGEN =10Ω
26 14.3 33.8 24 9.4
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximun Ratings 1 VGS = 0V, IS = 0.5A g 1.5 A V
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 0.9A . g.Full package VSD test condition IS = 0.9A .
2
CEP01N6G/CEB01N6G CEF01N6G
1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 VGS=10,8,7V 2.4 2.0 1.6 1.2 0.8 25 C 0.4 0 TJ=125 C 1 2 3 4 5 -55 C 6 7
ID, Drain Current (A)
VGS=4V
4
8
12
16
20
24
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
300 250 200 150 100 50 0 Coss Crss 0 5 10 15 20 25 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=0.6A VGS=10V
Ciss
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
0
VTH, Normalized Gate-Source Threshold Voltage
ID=250µA
10
-1
-25
0
25
50
75
100
125
150
10
-2
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP01N6G/CEB01N6G CEF01N6G
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=300V ID=1A 10
1
ID, Drain Current (A)
RDS(ON)Limit 10
0
100ms 1ms 10ms DC
4
10
-1
0
1.5
3
4.5
6
7.5
9
10
-2
TC=25 C TJ=150 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve
4
很抱歉,暂时无法提供与“CEF01N6G”相匹配的价格&库存,您可以联系我们找货
免费人工找货