CEP655N/CEB655N CEI655N/CEF655N
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP655N CEB655N CEI655N CEF655N VDSS 150V 150V 150V 150V RDS(ON) 0.153Ω 0.153Ω 0.153Ω 0.153Ω ID 15A 15A 15A 15A
d
PRELIMINARY
@VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
CEP SERIES TO-220
G
D S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD TJ,Tstg
e
TO-220F
Units V V
150
±25
15 60 83 0.56 -55 to 175 15 60 39 0.26
d d
A A W W/ C C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.8 62.5 Limit 3.8 65 Units C/W C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 1. 2005.June http://www.cetsemi.com
CEP655N/CEB655N CEI655N/CEF655N
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD VGS = 0V, IS = 15A g VDS = 120V, ID = 15A, VGS = 10V VDD = 75V, ID = 15A, VGS = 10V, RGEN = 25Ω Test Condition VGS = 0V, ID = 250µA VDS = 150V, VGS = 0V VGS = 25V, VDS = 0V VGS = -25V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 8.2A VDS = 40V, ID = 8.2A 2 118 5 750 175 70 17 48 40 46 26 6 12.5 15 1.5 35 100 80 90 34 Min 150 1 100 -100 4 153 Typ Max Units V
µA
4
nA nA V mΩ S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f .Full package IS(max) = 10A . g.Full package VSD test condition IS = 10A .
2
CEP655N/CEB655N CEI655N/CEF655N
30 VGS=10,8,6,4V 50 25 C
ID, Drain Current (A)
ID, Drain Current (A)
24
40
18
30
12
20 TJ=125 C -55 C
6
10
0
0
1
2
3
4
5
0 1 2 3 4 5 6 7
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 Ciss 800 600 400 200 0 0 5 10 15 20 25 Coss Crss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=8.2A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
10
1
10
0
10 -25 0 25 50 75 100 125 150
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP655N/CEB655N CEI655N/CEF655N
VGS, Gate to Source Voltage (V)
10 10 VDS=120V ID=15A
2
RDS(ON)Limit 100µs
ID, Drain Current (A)
8
4
10
1
1ms 10ms DC
6
4
10
0
2
0 0 6 12 18 24 30
10
-1
TC=25 C TJ=175 C Single Pulse
0
10
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4
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