CEG8205

CEG8205 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. G2 S2 S2 D D S1 S1 G1 1 2 3 4 8D 7 S2 6 S2 5 G2 G1 S1 S1 D TSSOP-8 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±10 4.5 25 1.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 125 Units C/W 2002.December 8 - 14 http://www.cetsemi.com CEG8205 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.7A VDS = 10V, ID = 4.5A, VGS = 4.5V VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω 20 18 60 28 10 2.3 2.9 1.7 1.2 40 40 108 56 15 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 10V, VDS = 0V VGS = -10V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A VDS = 10V, ID = 4.5A 0.5 24 32 10 500 300 140 Min 20 1 100 -100 1.0 30 40 Typ Max Units V µA nA nA V mΩ mΩ S 8 VDS = 8V, VGS = 0V, f = 1.0 MHz pF pF pF Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 8 - 15 CEG8205 10 VGS=4.5,3.5,2.5V VGS=2.0V 30 25 C ID, Drain Current (A) 6 ID, Drain Current (A) VGS=1.5V 8 24 18 4 12 2 6 TJ=125 C 0 -55 C 2 2.0 3 0 0 1 2 3 0 1 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 600 450 300 150 0 0 2 4 6 8 10 Coss Crss 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=4.5 VGS=4.5V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 8 - 16 CEG8205 VGS, Gate to Source Voltage (V) 5 V =10V DS ID=4.5A 10 2 ID, Drain Current (A) 4 RDS(ON)Limit 10 1 3 10 0 1ms 10ms 100ms 1s DC 2 1 10 -1 0 0 3 6 9 12 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area 8 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 Single Pulse -3 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 8 - 17