CEG8208

Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V G2 S2 S2 D G1 S1 S1 D CEG8208 D D G1 *1K G2 *1K S1 *Typical value by design S2 D 1 8 7 6 5 D S2 S2 G2 S1 2 S1 3 G1 4 TSSOP-8 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±12 6.5 25 1.5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 83 Units C/W Details are subject to change without notice . 1 Rev 3. 2006.Aug http://www.cetsemi.com CEG8208 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.5A VDS = 10V, ID =5A, VGS = 4.5V VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω 0.35 0.87 3.60 2.01 4.3 1.1 2.5 1.5 1.2 0.7 1.8 7.5 4.3 7.5 us us us us nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1.0 MHz 17 40 115 15 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A 0.5 18 24 1.2 22 32 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 10 -10 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units uA uA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 board,t < 10sec. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEG8208 20 16 12 8 VGS=4.5,3.5,2.5V 20 25 C 16 12 8 4 0 ID, Drain Current (A) VGS=1.5V 4 0 ID, Drain Current (A) TJ=125 C 0.0 0.5 1.0 -55 C 1.5 2.0 2.5 0 0.5 1 1.5 2 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=5A VGS=4.5V VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) IS, Source-drain current (A) VGS=0V 10 1 10 0 -50 0 50 100 150 200 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 3. On-Resistance Variation with Temperature VTH, Normalized Gate-Source Threshold Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS 10 ID=250µA VSD, Body Diode Forward Voltage (V) Figure 4. Body Diode Forward Voltage Variation with Source Current 2 RDS(ON)Limit ID, Drain Current (A) 10 1 10 0 1ms 10ms 100ms 1s DC 10 -1 -25 0 25 50 75 100 125 150 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VDS, Drain-Source Voltage (V) Figure 6. Maximum Safe Operating Area 3 CEG8208 VGS, Gate to Source Voltage (V) 5 V =10V DS ID=5A 4 3 2 t on td(on) VOUT 10% toff tr 90% td(off) 90% 10% tf INVERTED 90% VIN 1 0 50% 10% 50% PULSE WIDTH 0 1 2 3 4 5 6 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD RL D VOUT Figure 8. Switching Waveforms V IN VGS RGEN G S Figure 9. Switching Test Circuit 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 10 -1 10 -2 Single Pulse 10 -3 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 10. Normalized Thermal Transient Impedance Curve 4