CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2
D1 1 S1 2 S1 3 G1 4
8 D2 7 S2 6 S2 5 G2
G1 S1 S1 D1
9
TSSOP-8
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG -55 to 150 Limit 20 8 4.5 25 1.7 Unit V V A A A W C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a R JA 125 C/W
9-17
CEG9926
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
C
Symbol
Condition
VGS= 0V, ID=250µA VDS=20V, VGS=0V VGS= 8V, VDS=0V VDS=VGS, ID=250µA
VGS=4.5V, ID=4.5A VGS=4.0V, ID=5A VGS=2.5V, ID=3.5A
Min Typ C Max Unit
20 1 V µA nA 0.5
24 23 32
ON CHARACTERISTICS b
Gate Threshold Voltage 1.0
30 40
V
mΩ mΩ mΩ
9
Drain-Source On-State Resistance On-State Drain Current Forward Transconductance
VDS=5V, VGS=4.5V VDS=10V, ID=4.5A
10 10 500 300 140
A S
PF PF PF
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
C
VDS = 8V, VGS = 0V f =1.0MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 10V, ID =1A, VGEN = 4.5V, RGEN = 6 Ω
20 18 60 28 10
40 40 108 56 15
ns ns ns ns nC nC nC
VDS =10V, ID =4.5A, VGS =4.5V
9-18
2.3 2.9
CEG9926
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
VSD
Condition
VGS = 0V, Is =1.7A
Min Typ Max Unit
0.8 1.2 V
C
DRAIN-SOURCE DIODE CHARACTERISTICS b
Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
10
25 VGS=4.5,3.5,2.5V VGS=2.0V
8
20
ID, Drain Current(A)
ID, Drain Current (A)
6
15
9
4
10
2
5 Tj=125 C 0 0.0 0.5 1 1.5 25 C -55 C 2 2.5 3
VGS=1.5V
0 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
600 500 Ciss
Figure 2. Transfer Characteristics
1.80 1.60 1.40 1.20 1.00 0.80 0.60 -50 -25 0 25 50 75 100 125 150
ID=4.5A VGS=4.5V
C, Capacitance (pF)
400 Coss 300 200 100 0
Crss
0
2
4
6
8
10
12
VDS, Drain-to Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with Temperature
9-19
CEG9926
1.40 1.20 1.00 0.80 0.60 0.40 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.60
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250 A
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
30
Figure 6. Breakdown Voltage Variation with Temperature
20 10
gFS, Transconductance (S)
20 15 10 VDS=10V 5 0 0 3 6 9 12 15
Is, Source-drain current (A)
9
25
1
0.1 0.4
0.6
0.8
1.0
1.2
1.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Drain Current
5
ID, Drain Current (A)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
2
VGS, Gate to Source Voltage (V)
4 3 2 1 0 0
VDS=10V ID=4.5A
10 1
10
RD S( ON ) i Lim t
1m
10 m s
s
0m s
1s
D C
10
0
10
-1
10
-2
TA=25 C Tj=150 C Single Pulse 10 -1 10 0 10
1
2
4
6
8
10 12 14 16
10 -2
10
2
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge 9-20
Figure 10. Maximum Safe Operating Area
CEG9926
4
V IN D VGS RGEN G
90%
VDD t on RL VOUT VOUT
10%
toff tr
90%
td(on)
td(off)
90% 10%
tf
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
10
0
9
D=0.5 0.2
r(t),Normalized Effective Transient Thermal Impedance
10
-1
0.1 0.05 0.02 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 10
-3
10
-2
0.01 Single Pulse
10
-3
10
-4
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
9-21