N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 5.2A , RDS(ON) = 26mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 4
G1(6)
CEH2288
D1(2)
D2(5)
6
G2(4)
1 TSOP-6
2
3
S1(1) S2(3)
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±12
5.2 20 1.14 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 110 Units C/W
Details are subject to change without notice . 1
Rev 2. 2007.MARCH http://www.cetsemi.com
CEH2288
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 5.2A VDS = 10V, ID = 5.2A, VGS = 4.5V VDD = 10V, ID = 5.2A, VGS = 5V, RGEN = 3Ω 10.7 3.8 25.3 2.8 8.2 1.0 1.9 5.2 1.2 27 10 63 7 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A 0.5 21 26 Min 20 1 100 -100 1.0 26 35 Typ Max Units V
µA
nA nA V mΩ mΩ
Forward Transconductance
gFS
Ciss Coss Crss
VDS = 5V, ID = 5.2A
VDS = 10V, VGS = 0V, f = 1.0 MHz
17
835 125 95
S
pF pF pF
8
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEH2288
5 VGS=4.5,3.5,2.5V VGS=2.0V 10 25 C
ID, Drain Current (A)
3
ID, Drain Current (A)
4
8
6
2
4
1 VGS=1.5V 0 0 0.3 0.6 0.9
2
TJ=125 C -55 C
0 0 0.5 1.0 1.5 2.0
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1500 1250 1000 Ciss 750 500 250 0 0 Crss 5 10 15 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
Coss 20 25
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=5.2 VGS=4.5V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
25 50 75 100 125 150
10
10
0
10 -25 0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEH2288
VGS, Gate to Source Voltage (V)
5 V =10V DS ID=5.2A 10
2
ID, Drain Current (A)
4
RDS(ON)Limit 10
1
3
10
0
1ms 10ms 100ms DC
2
1
10
-1
0 0 3 6 9 12
10
-2
TA=25 C TJ=150 C Single Pulse 10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
8
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
2
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 Single Pulse
PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4