CEH2305

CEH2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 119mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,) PRELIMINARY ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±12 -4.9 -20 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.Aug http://www.cetsemi.com CEH2305 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -15V, ID = -4.9A, VGS = -4.5V VDD = -15V, ID= -4.9A, VGS = -10V, RGEN = 6Ω 10 5 43 6 8.5 2.5 1.6 -4.9 -1 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -2.2A VGS = -2.5V, ID = -1.2A gFS Ciss Coss Crss VDS = -10V, ID = -4.9A VDS = -15V, VGS = 0V, f = 1.0 MHz -0.7 42 54 82 5 910 160 210 -1.3 52 65 119 V mΩ mΩ mΩ S pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V -30 -1 100 -100 V µA TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 7 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEH2305 20 -VGS=10,8,6V 10 25 C -ID, Drain Current (A) 16 -VGS=5V 12 -ID, Drain Current (A) 8 6 8 -VGS=4V 4 4 -VGS=3V 2 TJ=125 C 0 -55 C 0.9 1.2 1.5 1.8 0 0 1 2 3 4 5 0 0.3 0.6 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1500 1250 1000 750 500 250 0 0 5 10 Crss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics Coss 15 20 25 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-4.9A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250µA 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.6 0.7 0.8 0.9 1.0 1.1 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEH2305 -VGS, Gate to Source Voltage (V) 5 V =-15V DS ID=-4.9A 4 10 2 RDS(ON)Limit -ID, Drain Current (A) 10 1 1ms 10ms 100ms 1s DC 3 10 0 2 10 -1 1 0 0 3 6 9 10 -2 TA=25 C TJ=150 C Single Pulse -1 10 10 0 10 1 10 2 7 Qg, Total Gate Charge (nC) Figure 7. Gate Charge -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 1 r(t),Normalized Effective Transient Thermal Impedance D=0.5 10 0 0.2 0.1 0.05 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -1 0.02 0.01 Single Pulse 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4