CEH2310

CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,) PRELIMINARY ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±12 6.2 25 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.April http://www.cetsemi.com CEH2310 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.0A VDS = 15V, ID = 5.8A, VGS = 4.5V VDD = 15V, ID = 5.8A, VGS = 10V, RGEN = 3Ω 4 6 28 4 10 1.8 3.3 3.0 1.0 10 15 50 10 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 5V, ID = 5.0A VDS = 15V, VGS = 0V, f = 1.0 MHz 5 830 110 85 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 2.0A 0.7 27 30 40 1.4 33 38 55 V mΩ mΩ mΩ BVDSS IDSS IGSS VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V 30 1 V µA TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units ±100 nA 8 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2