P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 6 5 4 G(3) 1 TSOP-6 2 3
CEH2313
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C
±20
-4.6 -18.4 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W
Rev 2.
2010.May 1
http://www.cetsemi.com
CEH2313
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.7A VDS = -15V, ID = -3.6A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 11 5 30 7 17 3 3.5 -1.7 -1.2 22 10 60 14 22 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4.6A VGS = -4.5V, ID = -3.6A VDS = -15V, ID = -4.6A -1 50 75 4 640 130 95 Min -30 -1 100 -100 -3 60 90 Typ Max Units V
µA
nA nA V mΩ mΩ S pF pF pF
7
VDS = -15V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEH2313
50 -VGS=10,8,6V 10 25 C
-ID, Drain Current (A)
-VGS=5V
30 20 10 0
-ID, Drain Current (A)
40
8 6 4 2 0
-VGS=4V
-VGS=3V
0 2 4 6 8 10
TJ=125 C 0.0 0.5 1.0 1.5
-55 C 2.0 2.5 3.0
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
900 750 600 450 300 150 0 Coss Crss 0 5 10 15 20 25
Ciss
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=-4.6A VGS=-10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=-250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEH2313
-VGS, Gate to Source Voltage (V)
10 V =-15V DS ID=-10A 8 10
2
RDS(ON)Limit
-ID, Drain Current (A)
10
1
1ms 10ms 100ms 1s DC
6
10
0
4
10
-1
2
0 0 5 10 15 20
10
-2
TA=25 C TJ=150 C Single Pulse
-1
10
10
0
10
1
10
2
7
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4