P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 62mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 6 5 4 G(3) 1 TSOP-6 2 3
CEH2321
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C
±12
-4.8 -19.2 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W
Details are subject to change without notice 1
Rev 3. 2010.Sep http://www.cetsemi.com
CEH2321
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.3A VDS = -10V, ID = -3.8A, VGS = -4.5V VDD = -10V, ID = -3.8A, VGS = -4.5V, RGEN = 3Ω 15 10 40 13 13 2.5 3 -1.3 -1.2 30 20 80 26 17 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = -3.6A VDS = -5V, ID = -4.5A -0.6 39 47 11 965 200 155 Min -20 -1 100 -100 -1.5 55 62 Typ Max Units V
µA
nA nA V mΩ mΩ S pF pF pF
VDS = -10V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEH2321
15 10
-ID, Drain Current (A)
9 6 3 0 0.0
-ID, Drain Current (A)
12
-VGS=4.5,3.0,2.5V
-VGS=2.0V
25 C 8 6 4 2 0
-VGS=1.5V
TJ=125 C 0.0 0.5 1.0 1.5
-55 C 2.0 2.5 3.0
0.5
1.0
1.5
2.0
2.5
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 800 600 400 200 0 Crss 0 2 4 6 8 10
Ciss
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=-4.5A VGS=-4.5V
Coss
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=-250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEH2321
-VGS, Gate to Source Voltage (V)
5 V =-10V DS ID=-3.8A 10
2
RDS(ON)Limit
1
-ID, Drain Current (A)
4 3 2 1 0
10
10ms 100ms 1s DC
10
0
10
-1
0
4
8
12
16
10
-2
TA=25 C TJ=150 C Single Pulse
-1
10
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
10%
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2
10
-1
10
-2
Single Pulse
10
-3
1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4