CEH2331

P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -5.2A , RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 6 5 4 G(3) 1 TSOP-6 2 3 CEH2331 PRELIMINARY D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C ±12 -5.2 -21 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 2. 2010.Sep http://www.cetsemi.com CEH2331 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -10V, ID = -4A, VGS = -4.5V VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3Ω 15 10 40 13 13 2.5 3 -5.2 -1.2 30 20 80 26 17 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -5V, ID = -4A VDS = -10V, VGS = 0V, f = 1.0 MHz 13 965 200 155 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = -4.5V, ID = -3.3A VGS = -2.5V, ID = -2.8A VGS = -1.8V, ID = -2A -0.4 36 46 60 -1 48 60 78 V mΩ mΩ mΩ BVDSS IDSS IGSS VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±12V, VDS = 0V -20 1 V µA TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units ±100 nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEH2331 15 -VGS=4.5,-4.0,-3.5V 12 -ID, Drain Current (A) -ID, Drain Current (A) 12 9 -VGS=2.5V 25 C 9 -VGS=2V 6 3 0 6 3 TJ=125 C -55 C 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 0 0 0.5 1 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 600 400 200 0 Ciss -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=-3.3A VGS=-4.5V Coss Crss 0 2 4 6 8 10 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=-250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEH2331 -VGS, Gate to Source Voltage (V) 5 V =-10V DS ID=-4A 10 2 -ID, Drain Current (A) 4 3 2 1 0 10 1 RDS(ON)Limit 1ms 10ms 100ms DC 10 0 10 -1 0 4 8 12 16 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 1 r(t),Normalized Effective Transient Thermal Impedance D=0.5 10 0 0.2 0.1 0.05 PDM t1 t2 0.02 0.01 Single Pulse 10 -1 10 -2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 4