CEK01N65

N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.35A, RDS(ON) = 10.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N65 PRELIMINARY D G G D G S D TO-92(Ammopack) S TO-92(Bulk) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 650 Units V V A A W C ±30 0.35 1.4 3.1 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Leadb Symbol RθJL Limit 40 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Feb http://www.cetsemi.com CEK01N65 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.2A VDS = 480V,ID = 0.35A, VGS = 10V VDD = 300V, ID = 0.35A, VGS = 10V, RGEN = 4.7Ω 14.3 14.6 23 16 5.8 2 2.3 0.35 1.5 28.6 29.2 46 32 7.7 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS b Test Condition VGS = 0V, ID = 250µA VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.2A VDS = 10V, ID = 0.2A Min 650 Typ Max Units V 25 10 -10 2.5 8.5 1 210 45 20 4.5 10.5 µA uA uA V Ω S pF pF pF 6 Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEK01N65 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 VGS=10,8,7V 0.6 0.5 0.4 0.3 0.2 25 C 0.1 0 TJ=125 C 1 2 3 4 5 -55 C 6 7 ID, Drain Current (A) VGS=6V VGS=5V VGS=4V 4 8 12 16 20 24 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 300 250 200 150 100 50 0 Crss 0 5 10 15 20 25 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=0.2A VGS=10V Coss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 0 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 -1 -25 0 25 50 75 100 125 150 10 -2 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEK01N65 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=480V ID=0.35A 10 1 ID, Drain Current (A) RDS(ON)Limit 10 0 4 10ms 100ms 10 -1 1s DC TC=25 C TJ=150 C Single Pulse 10 0 0 1 2 3 4 5 6 10 -2 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 10 -1 10 -2 Single Pulse 10 -3 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4