CEM0410

Single N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3.4A, RDS(ON) = 120mΩ @VGS = 10V. CEM0410 PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 100 Units V V A A W C ±20 3.4 13.6 2.5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2010.Jan. http://www.cetsemi.com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c CEM0410 Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 1.7A 2 100 Min 100 1 100 -100 4 120 Typ Max Units V µA nA nA V mΩ Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VDS = 25V, VGS = 0V, f = 1.0 MHz 540 100 22 14 3 38 7.5 12 2.5 4.2 3.4 30 7 80 15 16 pF pF pF ns ns ns ns nC nC nC A V VDD = 50V, ID = 3.4A, VGS = 10V, RGEN = 25Ω VDS = 80V, ID = 3.4A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings VGS = 0V, IS = 3.4A 1.2 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM0410 10 8 6 4 2 VGS=10,9,8,7,6V 5 4 3 2 1 0 25 C TJ=125 C 0 1.5 3 4.5 6 -55 C 7.5 ID, Drain Current (A) VGS=5V VGS=4.0V 0 0 2 4 6 8 10 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 700 600 Ciss 2.7 2.3 1.9 1.5 1.1 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=3.4A VGS=10V C, Capacitance (pF) 500 400 300 200 100 0 0 5 10 15 Coss Crss 20 25 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM0410 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=80V ID=3.4A 10 2 ID, Drain Current (A) 10 1 RDS(ON)Limit 100ms 10 0 1s 10s DC TA=25 C TJ=150 C Single Pulse 10 -1 10 -1 0 3 6 9 12 15 10 -2 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 t2 10 -2 Single Pulse -4 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4