CEM2163

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 1 S 2 S 3 S 4 G Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -20 Units V Gate-Source Voltage VGS ±12 V ID -8.9 A IDM -36 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Specification and data are subject to change without notice . 1 Rev 1. 2010.Oct http://www.cet-mos.com CEM2163 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -12V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(on) VGS = VDS, ID = -250µA -1.3 V VGS = -4.5V, ID = -7.6A -0.4 15 20 mΩ VGS = -2.5V, ID = -6A 22 30 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -10V, VGS = 0V, f = 1.0 MHz 2805 pF 505 pF 395 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 20 VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6Ω 40 ns 18 36 ns 89 178 ns Turn-Off Fall Time tf 49 98 ns Total Gate Charge Qg 31.5 41 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -6V, ID = -7A, VGS = -4.5V 3.8 nC 8.8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -2A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -2 A -1.2 V CEM2163 5 15 25 C -ID, Drain Current (A) -ID, Drain Current (A) -VGS=4.5,4,3.5,1.5V 4 3 2 1 -VGS=1V 0 0.0 0.5 0.75 1 1.25 0.5 1 1.5 2 2.5 3 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -55 C -VGS, Gate-to-Source Voltage (V) 1800 1200 Coss 600 Crss 0 5 10 15 20 25 2.2 1.9 ID=-7.6A VGS=-4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage TJ=125 C 0 Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 1.5 2400 1.2 6 -VDS, Drain-to-Source Voltage (V) 3000 1.3 9 0 0.25 3600 0 12 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 10 VDS=-6V ID=-7.6A 4 3 2 1 0 0 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM2163 7 14 21 28 35 10 100ms 1s 10 10 10 42 10ms 1 DC 0 -1 TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2