CEM2539A

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2539A D1 D2 FEATURES 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 5 G1 G2 S1 D1 7 D2 6 D2 5 S2 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 20 P-Channel -20 Units V V A A W C ±12 7.5 30 2.0 -55 to 150 ±12 -4.0 -16 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Details are subject to change without notice . 1 Rev 2. 2007.Sep. http://www.cetsemi.com N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD d CEM2539A TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS =10V, ID = 7.3A VGS = 4.5V, ID = 6.4A VGS = 2.5V, ID = 4.5A 0.6 18 20 26 910 230 165 13 9.5 34 10 VDS = 10V, ID =6A, VGS = 4.5V 10 1.4 3.1 7.5 VGS = 0V, IS = 1A 1 26 19 68 20 13 Min 20 1 100 -100 2 22 25 40 Typ Max Units V µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) nA nA V mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC A V 7 Ciss Coss Crss VDS = 8V, VGS = 0V, f = 1.0 MHz VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6Ω Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM2539A P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -10V, ID = -3.7A, VGS = -4.5V VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3Ω 14.6 9.2 73 36 10.8 1.7 2.7 -3.7 -1 29.2 18.4 146 72 14.3 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.5A VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A -0.5 70 80 90 10 1180 235 125 Min -20 -1 100 -100 -1 80 100 150 Typ Max Units V µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) nA nA V mΩ mΩ mΩ S pF pF pF Forward Transconductance gFS Ciss Coss Crss VDS = -5V, ID = -3.5A VDS = -10V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 N-CHANNEL 25 20 15 10 5 0 VGS=10,8,6,3V CEM2539A 10 8 6 4 25 C 2 TJ=125 C 0 0.0 -55 C 1.0 1.5 2.0 2.5 ID, Drain Current (A) ID, Drain Current (A) 5 VGS=2V 0 0.3 0.6 0.9 1.2 0.5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1260 1050 840 630 420 210 0 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=6A VGS=10V C, Capacitance (pF) Coss Crss 0 2 4 6 8 10 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 P-CHANNEL 15 12 9 -VGS=2V 6 3 0 -VGS=-10,-8,-6V CEM2539A 10 -ID, Drain Current (A) -ID, Drain Current (A) 8 6 4 2 TJ=125 C 0 25 C -55 C 1.0 1.5 2.0 0 1 2 3 4 5 0 0.5 -VDS, Drain-to-Source Voltage (V) Figure 7. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1500 1250 1000 750 500 250 0 Crss 0 2 4 6 8 10 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 8. Transfer Characteristics ID=-3.5A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 9. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 10. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=-250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 11. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 12. Body Diode Forward Voltage Variation with Source Current 5 N-CHANNEL VGS, Gate to Source Voltage (V) 4 3 2 1 0 CEM2539A 10 2 5 V =10V DS ID=6A RDS(ON)Limit ID, Drain Current (A) 10 1 10ms 100ms 1s DC 10 0 5 10 -1 0 2 4 6 8 10 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area P-CHANNEL -VGS, Gate to Source Voltage (V) 5 V =-6V DS ID=-3.5A 10 2 -ID, Drain Current (A) 4 3 2 1 0 10 1 RDS(ON)Limit 10ms 100ms 1s DC 10 0 10 -1 0 3 6 9 12 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEM2539A VDD t on V IN VGS RGEN G 90% toff tr 90% RL D VOUT td(on) VOUT 10% td(off) 90% 10% tf INVERTED 5 S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 t2 10 -2 Single Pulse -4 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7