CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2939 5 FEATURES 20V, 6.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 43mΩ @VGS = 2.5V. -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 90mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 20 P-Channel -20 Units V V A A W C ±12 6.5 20 2.0 -55 to 150 ±12 -4.8 -20 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W Specification and data are subject to change without notice . 1 Rev 3. 2007.Feb http://www.cetsemi.com CEM2939 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.3A VDS = 10V, ID =6.5A, VGS = 4.5V VDD = 15V, ID = 1A, VGS = 4.5V, RGEN =6Ω 14 10 34 11 10 1.4 3.2 6.5 1.2 30 20 70 20 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 5V, ID = 6.5A VDS = 8V, VGS = 0V, f = 1.0 MHz 17 910 230 163 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.4A 0.55 25 35 1.5 30 43 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 100 -100 V µA TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM2939 P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -2.0A VDS = -10V, ID = -4A, VGS = -4.5V VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3Ω 13.4 8.4 73.4 34.4 9.8 1.2 2.7 -4.8 -1.2 26.8 16.8 146.8 68.8 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -5V, ID = -5.5A VDS = -10V, VGS = 0V, f = 1.0 MHz 10 1155 205 120 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -1.0A -0.55 43 64 -1.5 55 90 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V -20 -1 100 -100 V µA TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 CEM2939 N-CHANNEL 20 VGS=4.5,3.5,3.0,2.5V 20 25 C ID, Drain Current (A) ID, Drain Current (A) 16 16 12 VGS=2.0V 12 5 TJ=125 C -55 C 8 8 4 4 0 0.0 0 0.5 1.0 1.5 2.0 1.0 1.5 2.0 2.5 3.0 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=6.5A VGS=4.5V C, Capacitance (pF) 800 600 400 Ciss Coss 200 0 0 2 4 Crss 6 8 10 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 P-CHANNEL 15 12 9 -VGS=2V 6 3 0 -VGS=4.5,-4.0,-3.5V CEM2939 15 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=2.5V 25 C 12 9 6 3 0 TJ=125 C 0 1 2 -55 C 3 4 5 0 0.5 1 1.5 2 2.5 -VDS, Drain-to-Source Voltage (V) Figure 7. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 2400 2000 1600 1200 800 400 0 Crss 0 2 4 6 8 10 12 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 8. Transfer Characteristics ID=-3.2A VGS=-4.5V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 9. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 10. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=-250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 11. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 12. Body Diode Forward Voltage Variation with Source Current 5 N-CHANNEL VGS, Gate to Source Voltage (V) 5 V =10V DS ID=6.5A 4 3 2 1 0 CEM2939 10 2 RDS(ON)Limit ID, Drain Current (A) 10 1 10ms 100ms 1s DC 10 0 5 10 -1 0 2 4 6 8 10 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area RDS(ON)Limit P-CHANNEL -VGS, Gate to Source Voltage (V) 5 V =-10V DS ID=-4A 10 2 -ID, Drain Current (A) 4 3 2 1 0 10 1 10ms 100ms 1s DC 10 0 10 -1 0 2.5 5 7.5 10 10 -2 TA=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEM2939 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7