CEM3060
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 14A, RDS(ON) = 7.8mΩ @VGS = 10V. RDS(ON) = 11.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
PRELIMINARY
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C
±20
14 50 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 1. 2006.April http://www.cetsemi.com
CEM3060
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2A VDS = 15V, ID = 14A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6Ω 17 5 50 10 16 5 3 14 1.3 35 10 100 20 20 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.0 MHz 2470 325 185 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 14A VGS = 4.5V, ID =14A 1 6.5 8.5 3 7.8 11.5 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 100 -100 V
µA
TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
5
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEM3060
40 25 VGS=10,8,6,5,4V
ID, Drain Current (A)
30
ID, Drain Current (A)
VGS=3V
20
15
20
10 25 C 5 TJ=125 C -55 C 2 3 4
10
0 0.0
0.5
1.0
1.5
2.0
0 1
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
3000 2500 2000 1500 1000 500 0 0 Crss 5 10 15 20 25 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
C, Capacitance (pF)
Ciss
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=14A VGS=10V
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=250µA
IS, Source-drain current (A)
25 50 75 100 125 150
10
10
0
10 -25 0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEM3060
VGS, Gate to Source Voltage (V)
10 V =15V DS ID=14A 10
2
RDS(ON)Limit
1
ID, Drain Current (A)
8
10
6
1ms 10ms 100ms 1s DC
10
0
5
4
2
10
-1
0 0 5 10 15 20 25
10
-2
TA=25 C TJ=150 C Single Pulse 10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4