CEM3252_09

N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 CEM3252 5 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 7.5 25 2.5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Thermal Resistance, Junction-to-Case Symbol RθJA RθJC Limit 50 25 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2009.Nov http://www.cetsemi.com CEM3252 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2.3A VDS = 15V, ID = 7A, VGS = 10V VDD = 15V, ID = 7A, VGS = 10V, RGEN = 3Ω 9 3 24 4 12.3 1.5 2.5 2.3 1.2 20 8 50 10 16 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 15V, ID = 7A VDS = 15V, VGS = 0V, f = 1.0 MHz 4 610 145 95 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 7A VGS = 4.5V, ID = 3.5A 1.0 22 30 3.0 28 40 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 30 1 100 -100 V µA TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. . e.RθJA is the sum of junction-to-case-ambient thermal resistance where the case tmermal reference is defined as the solder mounting surface of the drain pins. RθJc is guaranteed by design while RθJA is determined by the user's board design 1. 50CW when mounted on a 1in 2 pad of 2 oz copper 2. 105CW when mounted on a 0.4in 2 pad of 2 oz copper 3. 125CW when mounted on a minimun pad Scale 1 : 1 on letter size paper f.Pulse Test : Pluse Width < 300us,Duty cycle