CEM3317

CEM3317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 D1 7 D2 6 D2 5 PRELIMINARY 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Channel 1 -30 Channel 2 -30 Units V V A A W C ±20 -6.2 -25 2.0 -55 to 150 ±20 -4.9 -20 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.Sep http://www.cetsemi.com CEM3317 P-Channel(Q1) Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -15V, ID = -6.2A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 13 6 58 22 19 4.0 2.5 -6.2 -1.2 25 15 115 45 25 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -10V, ID = -6.2A VDS = -15V, VGS = 0V, f = 1.0 MHz 5 1150 250 150 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -6.2A VGS = -4.5V, ID = -4A -1 27 40 -3 33 52 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -30 -1 100 -100 V µA TA = 25 C unless otherwise noted Min Typ Max Units Symbol Test Condition nA nA 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEM3317 P-Channel(Q2) Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -4.9A VDS = -15V, ID = -4.9A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 11 4 59 23 13.8 1.8 2.2 -4.9 -1.2 22 8 118 46 18.3 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Min -30 -1 100 -100 -1 42 65 5 8 845 155 95 -3 52 85 Typ Max Units V µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = -15V, ID = -4.9A nA nA V mΩ mΩ S pF pF pF VDS = -15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 CEM3317 CHANNEL 1 25 -VGS=10,8V 10 -ID, Drain Current (A) 20 -ID, Drain Current (A) 8 -VGS=6V 15 6 10 -VGS=5V 4 25 C 2 TJ=125 C 0 -55 C 2 3 4 5 6 5 -VGS=4V -VGS=3V 0 0 1 2 3 4 5 6 0 1 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1500 1250 1000 750 500 250 Crss 0 0 5 10 15 20 25 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-6.2A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250µA 10 1 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 4 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current CEM3317 CHANNEL 2 20 -VGS=10,8,6,4,V 10 25 C -ID, Drain Current (A) -ID, Drain Current (A) 16 8 12 6 5 TJ=125 C 8 4 4 -VGS=3V 2 -55 C 0 0 0.5 1 1.5 2 2.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 Ciss 800 600 400 200 0 0 5 10 Coss Crss 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-4.9A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250µA 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 5 -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current CEM3317 CHANNEL 1 -VGS, Gate to Source Voltage (V) 10 V =-15V DS ID=-6.2A 10 2 RDS(ON)Limit -ID, Drain Current (A) 8 10 1 6 10 0 1ms 10ms 100ms 1s DC 4 2 10 -1 0 0 5 10 15 20 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area RDS(ON)Limit CHANNEL 2 -VGS, Gate to Source Voltage (V) 10 V =-15V DS ID=-4.9A 8 1 -ID, Drain Current (A) 10 10ms 100ms 1s DC 6 10 0 4 2 10 -1 0 0 3 6 9 12 10 TA=25 C TJ=150 C Single Pulse -1 10 0 10 1 Qg, Total Gate Charge (nC) Figure 7. Gate Charge -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area 6 CEM3317 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7