CEM4435A

CEM4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 33mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 1 S 2 S 3 S 4 G Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -30 Units V Gate-Source Voltage VGS ±20 V ID -8 A IDM -32 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 50 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Specification and data are subject to change without notice . Rev 2. 2010.July http://www.cetsemi.com CEM4435A Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -30V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -8A -1 17 20 mΩ VGS = -4.5V, ID = -5A 25 33 mΩ VDS = -15V, ID = -8A 13 S 1690 pF 285 pF 210 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -10V, ID = -1A, VGS = -10V, RGEN = 6Ω 15 30 ns 9 18 ns 60 120 ns Turn-Off Fall Time tf 20 40 ns Total Gate Charge Qg 19 25 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -15V, ID = -7A, VGS = -4.5V 5 nC 7 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. VGS = 0V, IS = -2.1A -2.1 A -1.2 V 5 CEM4435A 25 30 20 15 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8,7,6,5V -VGS=4V 10 5 -VGS=3V 0 0.0 0.5 1.0 1.5 2.0 0 1 -55 C 2 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 800 Coss 400 Crss 0 5 10 15 20 25 2.2 1.9 ID=-8A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0 -VGS, Gate-to-Source Voltage (V) Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 6 -VDS, Drain-to-Source Voltage (V) 1600 1.2 12 2.5 2000 1.3 25 C 18 TJ=125 C 2400 0 24 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 5 VDS=-15V ID=-7A 4 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM4435A 3 2 1 0 0 4 8 12 16 20 10 2 10 1 10 0 10 -1 DC 10 24 RDS(ON)Limit 1ms 10ms 100ms 1s TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) VOUT td(off) tf 90% 90% VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 PDM 0.02 10 t1 0.01 -2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 10 1 10 2 2