CEM4953H

CEM4953H Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.5A, RDS(ON) = 64mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -30 Units V Gate-Source Voltage VGS ±20 V ID -4.5 A IDM -18 A PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.July http://www.cetsemi.com CEM4953H Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -30V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics Input Capacitance VGS = VDS, ID = -250µA -3 V VGS = -10V, ID = -3.8A -1 52 64 mΩ VGS = -4.5V, ID = -3A 70 95 mΩ d Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -15V, VGS = 0V, f = 1.0 MHz 545 pF 95 pF 65 pF 10 ns 3 ns 28 ns Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω Turn-Off Fall Time tf 4 ns Total Gate Charge Qg 9.3 nC Gate-Source Charge Qgs 3.2 nC Gate-Drain Charge Qgd 1.5 nC VDS = -15V, ID = -4.8A, VGS = -10V Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.5A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -1.5 A -1.2 V CEM4953H 5 10 4 -VGS=3V 3 2 1 0 0 0.3 0.6 0.9 1.2 1.5 0 1 -55 C 2 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 300 200 Coss 100 Crss 0 3 6 9 12 15 2.2 1.9 ID=-3.8A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C TJ=125 C -VGS, Gate-to-Source Voltage (V) Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 0 400 1.2 4 -VDS, Drain-to-Source Voltage (V) 500 1.3 6 1.8 600 0 8 -ID, Drain Current (A) -ID, Drain Current (A) -VGS=10,8,6,4V -25 0 25 50 75 100 125 150 10 2 10 1 10 0 10 -1 VGS=0V 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 V =-15V DS ID=-4.8A 8 6 4 2 0 0 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEM4953H 3 6 9 12 10 1 10 0 10 -1 10 -2 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D RGEN td(off) tf 90% 90% VOUT VGS toff tr td(on) VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 0.02 Single Pulse 10 -2 10 -4 10 -3 10 t2 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2