P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -4A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8
CEM6601
D 7
D 6
D 5
SO-8 1
1 S
2 S
3 S
4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -60 Units V V A A W C
±20
-4 -16 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
Details are subject to change without notice . 1
Rev 3. 2010.July http://www.cetsemi.com
CEM6601
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -2A VDS = -30V, ID = -3.5A, VGS = -10V VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 13 4 45 6 22.6 2.4 5.7 -2 -1.2 26 8 90 12 29.4 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4A VGS = -4.5V, ID = -2A VDS = -10V, ID = -15A VDS = -30V, VGS = 0V, f = 1.0 MHz -1 64 75 10 1135 95 60 Min -60 -1 100 -100 -3 86 125 Typ Max Units V
µA
nA nA V mΩ mΩ S pF pF pF
Forward Transconductance
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEM6601
10 -VGS=10,8,6V 10
-ID, Drain Current (A)
-ID, Drain Current (A)
8 6
8 6 4 2 0 TJ=125 C
25 C
-VGS=3V
4 2 0
-55 C
0
0.3
0.6
0.9
1.2
1.5
1.8
0
1
2
3
4
5
6
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1500 1250 1000 750 500 250 0 Crss 0 5 10 15 20 25 30 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=-4A VGS=-10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS 10
2
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
VTH, Normalized Gate-Source Threshold Voltage
ID=-250µA
10
1
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEM6601
-VGS, Gate to Source Voltage (V)
10 V =-30V DS ID=-3.5A 8 6 4 2 0 10
2
RDS(ON)Limit
-ID, Drain Current (A)
10
1
10ms
0
10
100ms 1s DC
10
-1
0
5
10
15
20
10
-2
TA=25 C TJ=150 C Single Pulse 10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
10%
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2
10
-1
10
-2
Single Pulse
10
-3
1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4