CEM6659

CEM6659 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. -60V, -3.1A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 D1 7 D2 6 D2 5 5 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 60 P-Channel -60 Units V V A A W C ±20 4.1 15 2.0 -55 to 150 ±20 -3.1 -12 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.May http://www.cetsemi.com CEM6659 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.1A VGS = 4.5V, ID = 3.5A VDS = 10V, ID = 4.1A VDS = 25V, VGS = 0V, f = 1.0 MHz 1 56 66 Min 60 1 100 -100 3 68 86 Typ Max Units V µA µA µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) V mΩ mΩ S pF pF pF Forward Transconductance gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD 5 670 80 45 11 25 10 60 10 17 ns ns ns ns nC nC nC VDD = 30V, ID = 1A, VGS = 10V, RGEN = 6Ω 3 30 3 13 1.7 2.6 VDS = 30V, ID = 4.1A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings 4.1 VGS = 0V, IS = 2A 1.2 A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM6659 P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.3A VDS = -30V, ID = -3.1A, VGS = -10V VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 12 4 38 12 11 2.4 1.6 -3.1 -1.2 25 15 80 25 14 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -10V, ID = -3.1A VDS = -30V, VGS = 0V, f = 1.0 MHz 5 885 85 80 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -3.1A VGS = -4.5V, ID = -2.8A -1 100 130 -3 130 170 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -60 -1 100 -100 V µA TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol nA nA 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 3 CEM6659 N-CHANNEL 25 VGS=10,8,6,5V 20 10 25 C ID, Drain Current (A) 15 VGS=4.0V ID, Drain Current (A) 8 6 10 4 5 2 TJ=125 C -55 C 0 0 1 2 3 4 5 0 0.0 1.0 2.0 3.0 4.0 5.0 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 800 600 400 200 0 0 Crss 5 10 Ciss Coss 15 20 25 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=4.1A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM6659 P-CHANNEL 10 10 -VGS=10,8V -ID, Drain Current (A) 8 -ID, Drain Current (A) -VGS=6V 8 25 C 6 6 -VGS=5V 4 4 2 2 TJ=125 C -55 C 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 600 400 200 0 0 Crss 6 12 18 24 30 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-3.1A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250µA 10 1 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 5 CEM6659 N-CHANNEL VGS, Gate to Source Voltage (V) 10 V =30V DS ID=4.1A 10 2 ID, Drain Current (A) 8 RDS(ON)Limit 10 1 6 10 0 1ms 10ms 100ms 1s DC 5 4 2 10 -1 0 0 3 6 9 12 15 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area 10 2 P-CHANNEL -VGS, Gate to Source Voltage (V) 10 V =-30V DS ID=-3.1A 8 -ID, Drain Current (A) 10 1 RDS(ON)Limit 6 10 0 1ms 10ms 100ms 1s DC 4 2 10 -1 0 0 3 6 9 12 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEM6659 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 5 S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 Single Pulse -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7