CEM7350_08

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM7350 FEATURES 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 100 P-Channel -100 Units V V A A W C ±20 2.6 10 2.0 -55 to 150 ±20 -2.0 -8.0 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W 2008.October 1 http://www.cetsemi.com CEM7350 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.8A VDS = 80V, ID = 2.1A, VGS = 10V VDD = 50V, ID = 1A, VGS = 10V, RGEN = 22Ω 14 8 28 6 9 1.5 2.8 1.8 1.3 28 16 56 12 12 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 435 95 25 pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 2.1A 2 150 4 190 V mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 100 1 100 -100 V µA TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol 5 nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CEM7350 P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.4A VDS = -80V, ID = -1.5A, VGS = -10V VDD = -50V, ID = -1A, VGS = -10V, RGEN = 22Ω 15 11 57 20 14 2.5 5.0 -1.4 -1.6 30 22 114 40 18 ns ns ns ns nC nC nC A V VGS(th) RDS(on) Ciss Coss Crss VGS = VDS, ID = -250µA VGS = -10V, ID = -1.5A -2 250 575 115 30 -4 320 V mΩ pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -100 -1 100 -100 V µA TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol nA nA VDS = -25V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 N-CHANNEL 2.5 2.0 1.5 1.0 0.5 0 VGS=10,7,6,5,V CEM7350 5 4 3 2 25 C 1 TJ=125 C -55 C 4 6 8 10 0 ID, Drain Current (A) ID, Drain Current (A) 5 VGS=4V 0 2 4 6 8 10 0 2 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 500 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=2.1A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 P-CHANNEL 3.0 2.5 2.0 1.5 1.0 0.5 0 VGS=10,9,8,7,6V CEM7350 5 25 C -ID, Drain Current (A) -ID, Drain Current (A) 4 3 2 1 TJ=125 C -55 C 4 6 8 10 0 VGS=5V VGS=4V 0 1 2 3 4 5 6 0 2 -VDS, Drain-to-Source Voltage (V) Figure 7. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 900 750 600 450 300 150 0 Coss Crss 0 5 10 15 20 25 30 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 8. Transfer Characteristics ID=-1.5A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 9. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 10. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=-250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 11. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 12. Body Diode Forward Voltage Variation with Source Current 5 N-CHANNEL VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=80V ID=2.1A 10 CEM7350 2 RDS(ON)Limit 1 ID, Drain Current (A) 10 1ms 10ms 100ms 1s DC 10 0 5 10 -1 0 2 4 6 8 10 10 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area 10 2 P-CHANNEL -VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=-80V ID=-1.5A RDS(ON)Limit 1 -ID, Drain Current (A) 10 1ms 10ms 0 10 100ms 1s DC 10 -1 0 4 8 12 16 10 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEM7350 VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 Single Pulse 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7