CEM9288

CEM9288 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 10A, RDS(ON) = 13mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package. D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 SO-8 1 ABSOLUTE MAXIMUM RATINGS Parameter TA = 25 C unless otherwise noted Symbol Limit 20 Units V VGS ±8 V Drain-Source Voltage VDS Gate-Source Voltage ID 10 A Drain Current-Pulsed a IDM 40 A Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Drain Current-Continuous Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2013.Nov http://www.cet-mos.com CEM9288 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 30V, VGS = 0V 1 µA IGSSF VGS = 8V, VDS = 0V 100 nA IGSSR VGS = -8V, VDS = 0V -100 nA Off Characteristics V On Characteristics Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(on) VGS = VDS, ID = 250µA 1 V VGS = 4.5V, ID = 4A 0.4 13 mΩ VGS = 2.5V, ID = 2A 20 mΩ Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1.0 MHz 1400 205 pF 165 pF 18 11 ns 48 10 18 ns nC 3.5 nC 4 nC pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 15V, ID = 5A, VGS = 5V, RGEN =3Ω VDS = 15V, ID =5A, VGS = 4.5V ns ns Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage VSD c VGS = 0V, IS = 1.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 1.7 A 1.2 V CEM9288 15 VGS=4.5,4,2V 25 C 8 ID, Drain Current (A) ID, Drain Current (A) 10 6 VGS=1.5V 4 2 0 0 0.2 0.4 0.6 0 0.5 -55 C 1 1.5 2 2.5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 1200 800 Coss 400 Crss 0 2 4 6 8 10 2.2 1.9 ID=4A VGS=4.5V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 3 VDS, Drain-to-Source Voltage (V) 1600 1.2 6 0 2000 1.3 9 0.8 2400 0 12 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 VDS=4.5V ID=5A 4 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEM9288 3 2 1 0 0 5 10 15 20 10 2 10 1 10 0 10 -1 10 -2 RDS(ON)Limit 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 Single Pulse 10 -3 10 -4 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 2