CEM9407A
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -3.7A, RDS(ON) = 108mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D 8 D 7 D 6 D 5
5
SO-8 1
1 S 2 S 3 S 4 G
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60
Units V V A A W C
±20
-3.7 -20 2.5 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units C/W
2004.June 5 - 193
http://www.cetsemi.com
CEM9407A
P-Channel Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.3A VDS = -30V, ID = -3.7A, VGS = -10V VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 13 9 48 22 21 3 4 -1.3 -1.2 45 30 150 75 29 ns ns ns ns nC nC nC A V
d
TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = -250µA VDS = -48V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.7A VGS = -4.5V, ID = -3.1A VDS = -5V, ID = -3.7A -1 88 130 7 780 170 49 Min -60 -1 100 -100 -3 108 150 Typ Max Units V
µA
Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss
nA nA V mΩ mΩ S pF pF pF
VDS = -30V, VGS = 0V, f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
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CEM9407A
15 -VGS=10,6,5,4.5,4V 15
-ID, Drain Current (A)
12 -VGS=3.5V 9
-ID, Drain Current (A)
12 25 C 9
5
6
-VGS=3.0V
6
3
-VGS=2.5V
3 TJ=125 C -55 C 2 3 4 5
0 0 1 2 3 4 5
0 0 1
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 800 600 400 200 0 0 6 12 18 24 30 Coss Crss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=-3.7A VGS=-10V
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=-250µA
10
10
0
10 -25 0 25 50 75 100 125 150
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
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CEM9407A
-VGS, Gate to Source Voltage (V)
10 V =-30V DS ID=-3.7A 8 10
2
-ID, Drain Current (A)
RDS(ON)Limit 10
1
1ms 10ms 100ms 1s 10s DC
6
10
0
4
10
-1
2
0 0 6 12 18 24
10
-2
TA=25 C TJ=150 C Single Pulse
-1
10
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
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