CEM9939A

CEM9939A Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -3.5A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 160mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 D1 8 D1 7 D2 6 D2 5 5 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 30 P-Channel -30 Units V V A A W C ±20 7 30 2.0 -55 to 150 ±20 -3.5 -14 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units C/W 2001.November 5 - 245 http://www.cetsemi.com CEM9939A N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 2A VDS = 15V, ID = 2A, VGS = 10V VDD = 25V, ID = 1A, VGS = 10V, RGEN = 6Ω 16 7 47 10 20 3 6 2.3 1.1 24 14 60 15 24 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 7A VGS = 4.5V, ID = 3.5A VDS = 15V, ID = 7A 1 24 32 10 804 328 79 Min 30 1 100 -100 3 30 42 Typ Max Units V µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss nA nA V mΩ mΩ S pF pF pF VDS = 15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 246 CEM9939A P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.7A VDS = -10V, ID = -3.5A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 20 7 37 23 16 2 4.5 -1.7 -1.2 28 14 50 32 21 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.5A VGS = -4.5V, ID = -2A VDS = -15V, ID = -3.5A 3 -1 60 110 4.5 810 350 130 Min -30 -1 100 -100 -3 100 160 Typ Max Units V µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss 5 nA nA V mΩ mΩ S pF pF pF VDS = -15V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 5 - 247 CEM9939A N-CHANNEL 25 VGS=10,8,7,6,5V 30 25 C ID, Drain Current (A) VGS=4V 15 ID, Drain Current (A) 20 24 18 10 12 VGS=3V 5 6 TJ=125 C -55 C 2 3 4 5 6 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 Ciss 800 600 400 200 0 0 5 10 15 20 25 30 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=7A VGS=10V C, Capacitance (pF) Crss -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 5 - 248 CEM9939A P-CHANNEL 25 20 25 C -ID, Drain Current (A) 20 -VGS=10,7,6,5V 15 -ID, Drain Current (A) 16 12 5 -VGS=4V 10 8 5 -VGS=3V 4 TJ=125 C 0 -55 C 1.5 2.0 2.5 3.0 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 -VDS, Drain-to-Source Voltage (V) Figure 7. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 1000 Ciss 800 600 400 200 0 0 5 10 15 20 25 30 Coss Crss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 8. Transfer Characteristics ID=-3.5 VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 9. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 10. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250µA 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 11. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 12. Body Diode Forward Voltage Variation with Source Current 5 - 249 CEM9939A N-CHANNEL VGS, Gate to Source Voltage (V) 10 V =15V DS ID=2A RDS(ON)Limit 10 1 ID, Drain Current (A) 8 10ms 100ms 1s DC 6 10 0 4 2 10 -1 0 0 6 12 18 24 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area 1 P-CHANNEL -VGS, Gate to Source Voltage (V) 10 V =-10V DS ID=-3.5A 8 10 RDS(ON)Limit 10ms 100ms 1s DC 6 -ID, Drain Current (A) 10 0 4 2 10 -1 0 0 4 8 12 16 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 5 - 250 CEM9939A VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 5 S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 -2 10 -2 10 -4 10 -3 10 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 5 - 251