CEP10N6

CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N6 600V 0.75Ω 10A 10V CEB10N6 600V 0.75Ω 10A 10V CEF10N6 600V 0.75Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed a IDM e Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C TO-220F 600 Units V ±30 V 10 10 d A 6 6 40 40 d A 166 50 W 0.4 W/ C 1.3 d A h EAS 187.5 Single Pulsed Avalanche Current h IAS 5 A TJ,Tstg -55 to 175 C Single Pulsed Avalanche Energy Operating and Store Temperature Range mJ Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 0.75 2.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 2. 2011.Feb http://www.cetsemi.com Details are subject to change without notice . 1 Electrical Characteristics Parameter CEP10N6/CEB10N6 CEF10N6 Tc = 25 C unless otherwise noted Symbol Test Condition Min BVDSS VGS = 0V, ID = 250µA 600 Typ Max Units 1 µA 10 µA Off Characteristics Drain-Source Breakdown Voltage V VDS = 600V, VGS = 0V Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward IGSSF VGS = 30V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 0.75 Ω VDS = 480V, Tc = 125 C On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 5A 2 0.65 Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 1760 pF 220 pF 20 pF 32.5 ns 61 ns 150 ns Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID =10A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf 60 ns Total Gate Charge Qg 44 nC Gate-Source Charge Qgs 7.7 nC Gate-Drain Charge Qgd 17 nC VDS = 480V, ID = 10A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 10A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 6A . g.Full package VSD test condition IS = 6A . h.L = 15mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 10 A 1.4 V CEP10N6/CEB10N6 CEF10N6 12 VGS=10,9,8,7,6,5V 10 ID, Drain Current (A) ID, Drain Current (A) 12 8 6 4 VGS=4V 2 0 0 5 10 15 20 25 TJ=125C 0 -55 C 1.5 3.0 4.5 6.0 7.5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1200 800 Coss 400 Crss 0 5 10 15 20 25 3.0 2.5 ID=5A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 2 VGS, Gate-to-Source Voltage (V) Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 4 30 1600 1.2 6 VDS, Drain-to-Source Voltage (V) 2000 1.3 8 0 2400 0 10 -25 0 25 50 75 100 125 10 1 10 0 10 -1 VGS=0V 0.4 150 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=10A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP10N6/CEB10N6 CEF10N6 6 4 2 0 0 15 30 45 RDS(ON)Limit 100ms 10 1 10 0 1ms 10ms DC 10 60 2 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 0.02 0.01 10 Single Pulse -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3