CEP10N65

CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85Ω 10A 10V CEB10N65 650V 0.85Ω 10A 10V CEF10N65 650V 0.85Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed a IDM e Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C TO-220F 650 Units V ±30 V 10 10 d A 6 6 40 40 d A 200 60 W 0.4 W/ C 1.3 d A h EAS 542 Single Pulsed Avalanche Current h IAS 8.5 A TJ,Tstg -55 to 175 C Single Pulsed Avalanche Energy Operating and Store Temperature Range mJ Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 0.75 2.5 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 3. 2012.Nov. http://www.cetsemi.com Electrical Characteristics Parameter CEP10N65/CEB10N65 CEF10N65 Tc = 25 C unless otherwise noted Symbol Test Condition Min BVDSS VGS = 0V, ID = 250µA 650 Typ Max Units 1 µA 10 µA Off Characteristics Drain-Source Breakdown Voltage V VDS = 650V, VGS = 0V Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward IGSSF VGS = 30V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 0.85 Ω VDS = 520V, Tc = 125 C On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 5A 2 0.71 Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 1700 pF 185 pF 15 pF 38 ns 73 ns 104 ns Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID =10A, VGS = 10V, RGEN = 25Ω Turn-Off Fall Time tf 28 ns Total Gate Charge Qg 33 nC Gate-Source Charge Qgs 10 nC Gate-Drain Charge Qgd 10 nC VDS = 480V, ID = 10A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 10A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 6A . g.Full package VSD test condition IS = 6A . h.L = 15mH, IAS = 8.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 10 A 1.4 V CEP10N65/CEB10N65 CEF10N65 12 VGS=10,9,8,7,6V 10 ID, Drain Current (A) ID, Drain Current (A) 12 8 6 4 VGS=5V 2 0 0 2 4 6 8 TJ=125C 0 -55 C 2 4 6 8 10 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 1200 800 Coss 400 Crss 0 5 10 15 20 25 3.0 2.5 ID=5A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 25 C 2 10 IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 0 1600 1.2 6 VDS, Drain-to-Source Voltage (V) 2000 1.3 8 VGS=4V 2400 0 10 -25 0 25 50 75 100 125 10 1 10 0 10 -1 VGS=0V 0.4 150 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=10A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP10N65/CEB10N65 CEF10N65 6 4 2 0 0 9 18 27 10 RDS(ON)Limit 100ms 1 1ms 10ms DC 10 10 36 2 0 TC=25 C TJ=175 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 0.02 0.01 10 Single Pulse -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3