CEP1195

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1195 CEB1195 CEF1195 VDSS 900V 900V 900V RDS(ON) 2.75Ω 2.75Ω 2.75Ω ID 5A 5A 5A d @VGS 10V 10V 10V CEP1195/CEB1195 CEF1195 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G G D S G CEP SERIES TO-220 S CEB SERIES TO-263(DD-PAK) G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM e PD TJ,Tstg 5 20 166 1.3 900 TO-220F Units V V ±30 5d 20d 50 0.4 A A W W/ C C -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.75 62.5 Limit 2.5 65 Units C/W C/W . Details are subject to change without notice . 1 Rev 2. 2011.Jan http://www.cetsemi.com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b CEP1195/CEB1195 CEF1195 Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ISf VSDg VGS = 0V, IS = 5A VDS = 480V,ID = 5A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS =810V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 2.5A 2 2.35 Min 900 10 100 -100 4 2.75 Typ Max Units V µA nA nA V Ω VDS = 25V, VGS = 0V, f = 1.0 MHz 1440 130 10 30 21.5 80 22 30 6 10 5 1.4 60 43 160 44 39 pF pF pF ns ns ns ns nC nC nC A V VDD = 300V, ID =5A, VGS = 10V, RGEN = 25Ω Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 3.2A . g.Full package VSD test condition IS = 3.2A . 2 CEP1195/CEB1195 CEF1195 12 10 8 6 4 2 0 VGS=10,9,8,7V 10 25 C ID, Drain Current (A) ID, Drain Current (A) 7.5 VGS=6V 5 VGS=5V 2.5 TJ=125 C -55 C 0 5 10 15 20 25 30 0 0 2 4 6 8 10 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1800 1500 1200 900 600 300 0 Crss 0 5 10 15 20 25 Coss Ciss 4.6 4.0 3.4 2.8 2.2 1.6 01.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=2.5A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250µA VGS=0V 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP1195/CEB1195 CEF1195 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=480V ID=5A 10 2 RDS(ON)Limit ID, Drain Current (A) 10 1 1ms 10ms DC 100ms 10 0 0 10 20 30 40 10 -1 TC=25 C TJ=150 C Single Pulse 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4