N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP16N10L/CEB16N10L
PRELIMINARY
D
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100
Units V V A A W W/ C C
±20
15.2 60 60 0.48 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.5 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 1. 2010.Jan. http://www.cetsemi.com
CEP16N10L/CEB16N10L
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 15.2A VDS = 80V, ID = 15A, VGS = 10V VDD =50V, ID = 15A, VGS = 10V, RGEN = 25Ω 10 2.8 73 7.5 16 2 3 15.2 1.5 30 7 150 15 25 ns ns ns ns nC nC nC A V Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 640 110 30 pF pF pF VGS(th) RDS(on) gFS VGS = VDS, ID = 250µA VGS = 10V, ID = 7A VGS = 5V, ID = 5.5A VDS = 10V, ID = 7A 1 95 100 5 3 115 125 V mΩ mΩ S BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 100 1 100 -100 V
µA
Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d. L=0.5mH, IAS=13.3A, VDD=25V, RG=25Ω, Starting TJ=25 C
2
CEP16N10L/CEB16N10L
20 VGS=10,8,6,5V 20 25 C
ID, Drain Current (A)
ID, Drain Current (A)
15
VGS=4.0V
15
10
10
5
5 TJ=125 C -55 C 2.0 3.0 4.0 5.0
0
0
1
2
3
4
5
0
0.0
1.0
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
800 700 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
600 500 400 300 200 100 0 0 5 10 Coss Crss 15 20 25
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=7A VGS=10V
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.2
0.6
1.0
1.4
1.8
2.2
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP16N10L/CEB16N10L
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=80V ID=15A 10
2
RDS(ON)Limit
ID, Drain Current (A)
100ms 10
1
1ms 10ms DC
10
0
0
3
6
9
12
15
18
10
-1
TC=25 C TJ=175 C Single Pulse 10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2
10
-2
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve
4