CEP4060AL_10

N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D CEP4060AL/CEB4060AL D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A A W W/ C C ±20 17 12 68 43 0.3 -65 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 62.5 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2010.Sep http://www.cetsemi.com CEP4060AL/CEB4060AL Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 6A 0.9 VDS = 48V, ID = 15A, VGS = 10V VDD = 30V, ID = 15A, VGS = 5V, RGEN = 51Ω 10 7 84 22 12 1.1 3.2 15 1.3 13 9 110 29 17 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 16V, VDS = 0V VGS = -16V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 12A VGS = 5V, ID = 6A VDS = 10V, ID = 6A 1 1.5 60 70 10 405 120 30 Min 60 25 100 -100 2 75 90 Typ Max Units V µA nA nA V mΩ mΩ S pF pF pF VDS = 25V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEP4060AL/CEB4060AL 12 10 8 6 4 2 0 VGS=3V VGS=10,9,8,7,6,5,4V 28 25 C ID, Drain Current (A) ID, Drain Current (A) 21 14 TJ=125 C -55 C 0 7 0 1 2 3 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 600 450 300 150 0 Coss Crss 0 5 10 15 20 25 Ciss 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=15A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP4060AL/CEB4060AL VGS, Gate to Source Voltage (V) 15 12 9 6 3 0 VDS=48V ID=15A RDS(ON)Limit ID, Drain Current (A) 100µs 10 1 10ms 1ms 10ms DC TC=25 C TJ=175 C Single Pulse 10 0 10 0 4 8 12 16 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4