CEP6186

N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 33A, RDS(ON) = 23mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. CEP6186/CEB6186 PRELIMINARY D D G G D S S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise notedz Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60 Units V V A A W W/ C C ±20 33 132 43 0.28 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.5 62.5 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 3. 2010.July http://www.cetsemi.com CEP6186/CEB6186 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 33A VDS = 48V, ID = 28A, VGS = 10V VDD = 30V, ID = 19A, VGS = 10V, RGEN = 4.7Ω 15 5 38 10 24 6 6 33 1.5 30 10 76 20 31 ns ns ns ns nC nC nC A V VGS(th) RDS(on) gFS Ciss Coss Crss VGS = VDS, ID = 250µA VGS = 10V, ID = 19A VDS = 10V, ID = 19A VDS = 25V, VGS = 0V, f = 1.0 MHz 1 18 3 23 V mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 60 1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units 4 nA nA 5 1120 125 75 S pF pF pF Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CEP6186/CEB6186 24 20 16 12 8 4 0 0.0 VGS=10,8,7V 60 50 40 30 20 10 0 TJ=125C 25 C ID, Drain Current (A) VGS=4V VGS=3V 0.5 1.0 1.5 2.0 2.5 3.0 ID, Drain Current (A) -55 C 3 4 5 6 1 2 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 600 400 200 0 Coss Crss 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=19A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 10 2 VTH, Normalized Gate-Source Threshold Voltage IS, Source-drain current (A) ID=250µA 10 1 10 -25 0 25 50 75 100 125 150 0 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP6186/CEB6186 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=48V ID=28A 10 3 ID, Drain Current (A) 4 10 2 RDS(ON)Limit 10ms 100ms 1ms 10 1 DC TC=25 C TJ=175 C Single Pulse 10 -1 0 5 10 15 20 25 10 0 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 10 -1 10 -2 Single Pulse 10 -3 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4