CEP80N75

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A e CEP80N75/CEB80N75 CEF80N75 @VGS 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. D G G D S S CEB SERIES TO-263(DD-PAK) G G CEP SERIES TO-220 D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 75 ±20 80 320 200 1.3 880 45 -55 to 175 80 75 0.5 880 45 e e A A W W/ C mJ A C 320 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.75 62.5 Limit 2 65 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2007.Feb http://www.cetsemi.com CEP80N75/CEB80N75 CEF80N75 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 75A VDS = 60V, ID = 75A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 40A 2 10 Min 75 1 100 -100 4 13 Typ Max Units V µA nA nA V mΩ VDS = 15V, ID = 40A VDS = 25V, VGS = 0V, f = 1.0 MHz 45 3550 580 40 24 5 61 18 79.3 20.6 25.9 75 1.5 48 10 122 36 105.5 S pF pF pF ns ns ns ns nC nC nC A V VDD = 37.5V, ID = 45A, VGS = 10V, RGEN = 4.7Ω Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 51A . 2 CEP80N75/CEB80N75 CEF80N75 50 40 30 20 10 0 VGS=10,9,8,7V 120 100 75 50 25 C 25 TJ=125 C 0 0.5 1 1.5 2 0 0 1 2 3 -55 C 4 5 ID, Drain Current (A) VGS=6V VGS=5V ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 6000 5000 4000 3000 2000 1000 0 Coss Crss 0 5 10 15 20 25 Ciss 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=40A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 2 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 1 10 -25 0 25 50 75 100 125 150 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP80N75/CEB80N75 CEF80N75 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=60V ID=75A 10 3 ID, Drain Current (A) RDS(ON)Limit 10 2 100ms 1ms 10ms DC 10 1 0 15 30 45 60 75 90 10 0 TC=25 C TJ=175 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4