N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEPF634 CEBF634 CEIF634 CEFF634 VDSS 250V 250V 250V 250V RDS(ON) 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 8.1A 8.1A 8.1A 8.1A
d
CEPF634/CEBF634 CEIF634/CEFF634
@VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
CEI SERIES TO-262(I2-PAK)
G D S
G
CEP SERIES TO-220
D
S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM e PD TJ,Tstg 8.1 5.1 32 74 0.59 250
TO-220F
Units V V
±20
8.1
d
A A A W W/ C C
5.1 d 32 d 38 0.3
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.7 62.5 Limit 3.3 65 Units C/W C/W
Details are subject to change without notice . 1
Rev 2. 2010.June http://www.cetsemi.com
CEPF634/CEBF634 CEIF634/CEFF634
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b c
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD VGS = 0V, IS = 8.1A 0.9 VDS = 200V, ID = 5.6A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 250V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4.5A VDS = 50V, ID = 5.1A 4.4 925 95 20 16 3.5 38 4 18 3 5 8.1 1.5 32 7 76 8 23 2 Min 250 25 100 -100 4 0.45 Typ Max Units V
µA
nA nA V Ω S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1.0 MHz
VDD = 125V, ID = 5.6A, VGS = 10V, RGEN = 12Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f .Full package IS(max) = 6A . g .UIS condition Vdd=25V L=2mH Rg=25ohm Ias=8.1A .
2
CEPF634/CEBF634 CEIF634/CEFF634
12 10 8 6 4 2 0 VGS=10,9,8,7V 10
1
ID, Drain Current (A)
VGS=6V
ID, Drain Current (A)
10
0
TJ=150 C
-55 C
VGS=5V
VGS=4V
0 1 2 3 4 5 6 10
-1
25 C 2 4 6
1.VDS=40V 2.Pulse Test 8 10
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 800 600 400 200 0 Coss Crss 0 10 20 30 40 50 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=5.1A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
IS, Source-drain current (A)
ID=250µA
10
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEPF634/CEBF634 CEIF634/CEFF634
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=200V ID=5.6A RDS(ON)Limit 100ms 1ms 10ms DC 10
0
ID, Drain Current (A)
10
1
0
3
6
9
12
15
18
21
10
-1
TC=25 C TJ=150 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2 0.1 0.05 0.02
10
-1
10
-2
0.01 Single Pulse
PDM t1 t2
10
-3
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4
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