CES2305
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -4A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G
D G SOT-23 S
PRELIMINARY
D
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C
±12
-4 -15 1.25 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice . 1
Rev 1. 2006.April http://www.cetsemi.com
CES2305
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -15V, ID = -4A, VGS = -4.5V VDD = -15V, ID= -4A, VGS = -10V, RGEN = 6Ω 9 4 42 5 8.4 2.4 1.5 -4 -1 20 10 85 10 11 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -4A VGS = -4.5V, ID = -3.5A VGS = -2.5V, ID = -1A gFS Ciss Coss Crss VDS = -10V, ID = -4A VDS = -15V, VGS = 0V, f = 1.0 MHz -0.7 42 53 85 5 900 155 205 -1.3 55 70 120 V mΩ mΩ mΩ S pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V -30 -1 100 -100 V
µA
TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
7
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CES2305
50 -VGS=10,8,6V 10 25 C
-ID, Drain Current (A)
40 -VGS=5V 30
-ID, Drain Current (A)
8
6
20
-VGS=4V
4
10
-VGS=3V
2 TJ=125 C 0 -55 C 1.5 2.0 2.5 3.0
0 0 2 4 6 8 10
0
0.5
1.0
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1500 1250 1000 750 500 250 0 0 5 10 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
Coss
Crss 15 20 25
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=-4A VGS=-10V
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
1
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=-250µA
10
10
0
10 -25 0 25 50 75 100 125 150
-1
0.6
0.7
0.8
0.9
1.0
1.1
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CES2305
-VGS, Gate to Source Voltage (V)
5 V =-15V DS ID=-4A 4 10
2
RDS(ON)Limit
-ID, Drain Current (A)
10
1
1ms 10ms
0
3
10
2
100ms 1s DC
10
-1
1
0 0 3 6 9
10
-2
TA=25 C TJ=150 C Single Pulse
-1
10
10
0
10
1
10
2
7
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-2
Single Pulse
-3
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4