CES2310

N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 60mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G S G SOT-23 CES2310 D D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±12 4.8 20 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W Details are subject to change without notice . 1 Rev 3. 2007.Aug http://www.cetsemi.com CES2310 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 15V, ID = 4.8A, VGS = 4.5V VDD = 15V, ID = 4.8A, VGS = 10V, RGEN = 3Ω 10 3 35 4 9.0 2.3 2.2 4.8 1 20 6 70 8 12 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 2A gFS Ciss Coss Crss VDS = 10V, ID = 4.8A VDS = 15V, VGS = 0V, f = 1.0 MHz 0.6 28 32 45 12 610 125 80 1.4 34 40 60 V mΩ mΩ mΩ S pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 30 1 100 -100 V µA TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 7 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CES2310 15 12 9 6 3 0 VGS=10,8,6,3V 10 25 C 8 6 4 2 0 ID, Drain Current (A) VGS=2V ID, Drain Current (A) TJ=125 C 0 0.5 1.0 1.5 -55 C 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 900 750 600 450 300 150 0 Crss 0 5 10 15 20 25 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=4.8A VGS=10V Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 10 -1 0 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250µA 10 -25 0 25 50 75 100 125 150 0.6 0.7 0.8 0.9 1.0 1.1 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CES2310 VGS, Gate to Source Voltage (V) 5 VDS=15V ID=4.8A 10 2 RDS(ON)Limit ID, Drain Current (A) 4 10 1 1ms 10ms 100ms 1s DC 3 10 0 2 10 -1 1 0 0 3 6 9 10 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 7 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 Single Pulse -4 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4