CES2317

CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). D Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-23 package. G D S G S SOT-23 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS -30 Units V Gate-Source Voltage VGS ±12 V ID -3.1 A IDM -12 A PD 1.25 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 100 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Rev 1 2012.Jan http://www.cetsemi.com Details are subject to change without notice . 1 CES2317 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -30V, VGS = 0V -1 µA IGSSF VGS = 12V, VDS = 0V 100 nA IGSSR VGS = -12V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = VDS, ID = -250µA -1.2 V VGS = -10V, ID = -3.0A 63 80 mΩ VGS = -4.5V, ID = -1.5A VGS = -2.5V, ID = -1.0A 70 86 90 120 mΩ mΩ VDS = -15V, VGS = 0V, f = 1.0 MHz -0.5 660 pF 90 pF 65 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -15V, ID= -1A, VGS = -4.5V, RGEN = 6Ω 11 22 ns 6 12 ns 33 66 ns Turn-Off Fall Time tf 7 14 ns Total Gate Charge Qg 7.0 9.1 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -15V, ID = -3.0A, VGS = -4.5V 0.9 nC 2.3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage VSD c VGS = 0V, IS = -1.0A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 -1.0 A -1.2 V CES2317 5 -VGS=10,8,6,3V 25 C -VGS=2V 4 3 2 1 0 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 2.0 2.5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 450 300 150 Coss Crss 0 5 10 15 20 25 2.2 1.9 ID=-3.0A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage -55 C -VGS, Gate-to-Source Voltage (V) Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C 1 0 600 1.2 2 -VDS, Drain-to-Source Voltage (V) 750 1.3 3 1.0 900 0 4 -ID, Drain Current (A) -ID, Drain Current (A) 5 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.7 0.8 0.9 1.0 1.1 1.2 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 5 10 VDS=-15V ID=-3.0A 4 3 2 1 0 0 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CES2317 2 4 6 8 10 1ms 10ms 100ms 1s DC 10 0 10 -1 10 10 1 TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 2 VDD t on RL V IN D RGEN tf 90% 90% VOUT VGS toff td(off) tr td(on) VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 Single Pulse 10 -3 10 -4 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2