CET04N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D
D G SOT-223 D
S
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 100 Units V V A A W C
±20
3 12 3 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W
Details are subject to change without notice. 1
Rev2. 2010.Sep. http://www.cetsemi.com
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c
d
CET04N10
TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.85A VDS = 80V, ID = 2.1A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 2.6A VGS = 6V, ID = 1.3A VDS = 15V, ID = 2.6A 2 160 200 3 385 85 25 11 3 33 6 9.2 1.5 2.7 1.85 1.2 22 6 66 12 12 Min 100 1 100 -100 4 200 280 Typ Max Units V
µA
nA nA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC A V
VDS = 25V, VGS = 0V, f = 1.0 MHz
VDD = 50V, ID = 1A, VGS = 10V, RGEN = 22Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CET04N10
10 8 6 4 2 0 VGS=10,6,5,4.5V 5 4 3 2 1 0 TJ=125 C 25 C 0 1 2 3 4 5 -55 C
ID, Drain Current (A)
VGS=4.0V
VGS=3.5V
0
2
4
6
8
10
ID, Drain Current (A)
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
600 500 400 300 200 100 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=2.6A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CET04N10
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=80V ID=2.1A 10
2
RDS(ON)Limit
ID, Drain Current (A)
10
1
1ms 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse
-1
10
0
10
-1
0
2
4
6
8
10
10
-2
10
10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2
10
-1
10
-2
Single Pulse
10
-3
1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4