CET3055L

CET3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-223 package. D G D S G SOT-223 ABSOLUTE MAXIMUM RATINGS S TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 60 Units V Gate-Source Voltage VGS ±20 V ID 4 A IDM 16 A PD 3 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 42 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b 2009.July http://www.cetsemi.com 7 - 34 Electrical Characteristics Parameter CET3055L TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 60 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 60V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250µA 2 V VGS = 10V, ID = 4A 63 85 mΩ VGS = 5V, ID = 2A 73 100 mΩ VDS = 5V, ID = 3.7A 1 3 6 S d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 400 520 pF 120 155 pF 35 45 pF 9 20 ns Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 25V, ID = 1A, VGS = 10V, RGEN = 6Ω 3 5 ns 28 36 ns Turn-Off Fall Time tf 4 6 ns Total Gate Charge Qg 13 17 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 48V, ID = 3.7A, VGS = 10V 1.5 nC 3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 3.7A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 7 - 35 4 A 1.2 V 7 CET3055L 10 VGS=10,9,8,7,6V 20 VGS=4V 15 10 5 0 0 1 2 3 4 5 0 -55 C 6 4 2 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 300 200 Coss 100 Crss 0 5 10 15 20 25 2.2 1.9 ID=3.9A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 2 6 400 1.2 4 VDS, Drain-to-Source Voltage (V) 500 1.3 6 0 600 0 25 C 8 ID, Drain Current (A) ID, Drain Current (A) 25 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 7 - 36 10 V =48V DS ID=3.7A RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CET3055L 6 4 2 0 0 4 8 12 10 1 10 0 10 -1 10 16 1ms 10ms 100ms 1s DC TA=25 C TJ=150 C Single Pulse -2 10 -1 10 0 10 7 1 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) VOUT td(off) tf 90% 90% VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 7 - 37 10 1 10 2