CEU4204

N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 30mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED4204/CEU4204 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 40 Units V V A A W W/ C C ±20 24 90 31 0.25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4 50 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 2. 2006.Nov http://www.cetsemi.com CED4204/CEU4204 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 20V, ID = 6A, VGS = 10V VDD = 20V, ID = 6A, VGS = 10V, RGEN = 3Ω 14 10 17 18 20.5 3.5 4.0 24 1.2 30 20 35 35 27 ns ns ns ns nC nC nC A V gFS b Ciss Coss Crss VDS = 5V, ID = 6A VDS = 20V, VGS = 0V, f = 1.0 MHz 10 1050 155 95 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A 1 24 34 3 30 45 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 40 1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CED4204/CEU4204 10 VGS=10,8,6V 8 6 4 2 40 32 24 16 25 C 8 0 TJ=125 C 2.0 2.5 3.0 3.5 -55 C 4.0 4.5 ID, Drain Current (A) VGS=3.0V 0 0 1 2 3 4 5 ID, Drain Current (A) VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1500 1250 1000 750 500 250 0 Crss 0 5 10 15 20 25 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=6A VGS=10V C, Capacitance (pF) Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 2 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 1 -25 0 25 50 75 100 125 150 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED4204/CEU4204 VGS, Gate to Source Voltage (V) 10 V =20V DS ID=6A 10 2 RDS(ON)Limit 1ms 10ms 100ms DC ID, Drain Current (A) 8 6 4 2 0 4 10 1 10 0 0 4 8 12 16 20 24 10 -1 TC=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4