CEU4269_10

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEU4269 FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-252-4L package. S1 G1 S2 G2 CEU SERIES TO-252-4L D1/D2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous e Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol N-Channel VDS VGS ID e IDM PD TJ,Tstg 40 P-Channel 40 Units V V A A W W/ C C ±20 14 56 10.4 0.08 -55 to 150 ±20 -12 -48 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 12 50 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2010.Aug http://www.cetsemi.com CEU4269 N-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1.0A VDS = 20V, ID = 6A, VGS = 10V VDD = 20V, ID = 6A, VGS = 10V, RGEN = 3Ω 14 10 17 18 20.5 3.5 4.0 8 1.2 30 20 35 35 27 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Test Condition VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 7A VGS = 4.5V, ID = 5A VDS = 10V, ID = 7A VDS = 20V, VGS = 0V, f = 1.0 MHz 1 25 35 3 1050 155 95 Min 40 1 100 -100 3 32 46 Typ Max Units V µA Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS c Ciss Coss Crss nA nA V mΩ mΩ S pF pF pF Forward Transconductance Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. 2 CEU4269 P-Channel Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance c Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.0A VDS = -20V, ID = -5A, VGS = -10V VDD = -20V, ID = -5A, VGS = -10V, RGEN = 3Ω 12 5 33 4 20 3 4 -8 -1.2 24 10 66 8 26 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -10V, ID = -5A VDS = -20V, VGS = 0V, f = 1.0 MHz 3 1125 150 100 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID = -3A -1 37 50 -3 45 65 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -40 -1 100 -100 V µA TA = 25 C unless otherwise noted Test Condition Min Typ Max Units Symbol nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. 3 N-CHANNEL 10 8 6 4 2 VGS=10,8,6V CEU4269 50 25 C 40 30 20 10 0 ID, Drain Current (A) ID, Drain Current (A) VGS=3.0V 0 0 1 2 3 4 5 0 TJ=125 C 2 4 -55 C 6 8 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1500 1250 1000 750 500 250 0 Crss 0 5 10 15 20 25 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=7A VGS=10V C, Capacitance (pF) Ciss -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 P-CHANNEL 25 20 -VGS=10,7,6V CEU4269 30 25 C -ID, Drain Current (A) -VGS=5.0V 15 10 5 0 -ID, Drain Current (A) 24 18 12 6 0 -VGS=4.0V -VGS=3.0V TJ=125 C 0 2 4 -55 C 6 8 0 1 2 3 4 5 -VDS, Drain-to-Source Voltage (V) Figure 7. Output Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1500 1250 1000 750 500 250 0 Crss 0 5 10 15 20 25 30 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 8. Transfer Characteristics ID=-5A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 9. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 10. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 10 1 VTH, Normalized Gate-Source Threshold Voltage ID=-250µA 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 11. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 12. Body Diode Forward Voltage Variation with Source Current 5 N-CHANNEL VGS, Gate to Source Voltage (V) 10 V =20V DS ID=6A 8 6 4 2 0 CEU4269 10 2 RDS(ON)Limit ID, Drain Current (A) 10 1 1ms 10ms 100ms DC 10 0 10 -1 0 4 8 12 16 20 24 10 -2 TC=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 13. Gate Charge VDS, Drain-Source Voltage (V) Figure 14. Maximum Safe Operating Area RDS(ON)Limit P-CHANNEL -VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=-20V ID=-5A 10 2 -ID, Drain Current (A) 10 1 1ms 10ms 100ms DC 10 0 10 -1 0 4 8 12 16 20 10 -2 TC=25 C TJ=150 C Single Pulse -2 10 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 15. Gate Charge -VDS, Drain-Source Voltage (V) Figure 16. Maximum Safe Operating Area 6 CEU4269 VDD t on V IN VGS RGEN G 90% toff tr 90% RL D VOUT td(on) VOUT 10% td(off) 90% 10% tf INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 17. Switching Test Circuit Figure 18. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7