CEU630N

N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.5A, RDS(ON) = 0.36Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED630N/CEU630N D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 200 Units V V A A W W/ C C ±20 7.5 30 54 0.43 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.3 50 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2009.March http://www.cetsemi.com CED630N/CEU630N Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 7.5A VDS = 160V, ID = 5.9A, VGS = 10V VDD = 100V, ID = 5A, VGS = 10V,RGEN = 50Ω 24 15 116 25 19 3 5 7.5 1.5 48 30 232 50 24.7 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = 10V, ID = 3.5A VDS = 25V, VGS = 0V, f = 1.0 MHz 4 930 130 25 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 3.5A 2 0.30 4 0.36 V Ω BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 200 25 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Device Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CED630N/CEU630N 12 10 8 6 4 2 VGS=10,9,8,7V 15 12.5 10 7.5 5 25 C ID, Drain Current (A) VGS=6V ID, Drain Current (A) VGS=5V 0 0 2 4 6 8 10 12 2.5 0 TJ=125C 0 1.5 3.0 4.5 -55 C 6.0 7.5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1800 1500 1200 900 600 300 0 Coss Crss 0 5 10 15 20 25 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=3.5A VGS=10V RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage IS, Source-drain current (A) ID=250µA 10 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.7 1.0 1.3 1.6 1.9 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED630N/CEU630N VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=160V ID=5.9A 10 2 RDS(ON)Limit 100ms 1ms 10ms DC ID, Drain Current (A) 10 1 10 0 0 5 10 15 20 10 -1 TC=25 C TJ=175 C Single Pulse 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4