CEU6355

CED6355/CEU6355 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -26A, RDS(ON) = 42mΩ RDS(ON) = 65mΩ @VGS = -10V. @VGS = -4.5V. PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60 Units V V A A W W/ C C ±20 -26 -104 50 0.4 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.5 50 Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2006.Aug http://www.cetsemi.com CED6355/CEU6355 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -26A VDS = -30V, ID = -20A, VGS = -10V VDD = -30V, ID = -20A, VGS = -10V, RGEN = 3Ω 15 4 47 11 32.2 5.7 5.4 -26 -1.3 30 8 94 22 42.8 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -10V, ID = -26A VDS = -30V, VGS = 0V, f = 1.0 MHz 22 2020 180 95 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -26A VGS = -4.5V, ID = -21A -1 35 50 -3 42 65 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -60 -1 100 -100 V µA Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units nA nA 6 Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. 2 CED6355/CEU6355 25 -VGS=10,8,6,4V 35 -ID, Drain Current (A) 20 -ID, Drain Current (A) 28 15 21 10 14 25 C 7 TJ=125 C -55 C -VGS=3V 5 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 3000 2500 Ciss 2000 1500 1000 500 0 Crss 0 5 10 15 20 25 30 Coss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-26A VGS=-10V C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) 10 3 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250µA VGS=0V 10 2 10 1 10 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 1.8 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED6355/CEU6355 -VGS, Gate to Source Voltage (V) 10 V =-30V DS ID=-20A 8 10 3 -ID, Drain Current (A) 10 2 100µs 1 6 10 4 1ms 10ms DC 2 10 0 6 10 -1 0 0 10 20 30 40 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4