P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -16A, RDS(ON) = 86mΩ RDS(ON) = 125mΩ @VGS = -10V. @VGS = -4.5V.
CED6601/CEU6601
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -60
Units V V A A W W/ C C
±20
-16 -64 42 0.33 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3 50 Units C/W C/W
Details are subject to change without notice . 1
Rev 2. 2006.Oct http://www.cetsemi.com
CED6601/CEU6601
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.3A VDS = -30V, ID = -3.5A, VGS = -10V VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω 15 8 69 20 19.2 3.2 4 -16 -1.2 30 16 138 40 25.5 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -10V, ID = -15A VDS = -30V, VGS = 0V, f = 1.0 MHz 10 1130 120 70 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -8A VGS = -4.5V, ID = -6A -1 70 95 -3 86 125 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -60 -1 100 -100 V
µA
Tc = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
6
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
2
CED6601/CEU6601
50 -VGS=10,8V 25
-ID, Drain Current (A)
40
-ID, Drain Current (A)
20
-VGS=6V
30
15
20
-VGS=5V
10 25 C 5 TJ=125 C 0 -55 C 2 3 4 5 6
10
-VGS=4V
-VGS=3V
0 0 3 6 9 12 15 18 0
1
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1500 1250 1000 750 500 250 0 Crss 0 5 10 15 20 25 30 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
ID=-8A VGS=-10V
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
10
2
VTH, Normalized Gate-Source Threshold Voltage
VDS=VGS ID=-250µA
VGS=0V
10
1
10
0
10 -25 0 25 50 75 100 125 150
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CED6601/CEU6601
-VGS, Gate to Source Voltage (V)
10 V =-30V DS ID=-3.5A 8 10
2
RDS(ON)Limit 100µs 1ms 10ms DC
-ID, Drain Current (A)
10
1
6
4
10
0
2
6
-1
0 0 5 10 15 20
10
TC=25 C TJ=150 C Single Pulse
-1
10
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
VDD t on V IN D VGS RGEN G
90%
toff tr
90%
RL VOUT
td(on) VOUT
td(off)
90% 10%
tf
10%
INVERTED
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02 0.01 Single Pulse
PDM t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
10
-2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve
4
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