CEUF640

N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CEDF640/CEUF640 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 200 Units V V A A W W/ C C ±20 15 60 83 0.66 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.8 50 Units C/W C/W 2009.Dec 1 http://www.cetsemi.com CEDF640/CEUF640 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 15A VDS = 160V, ID = 15A, VGS = 10V VDD = 100V, ID = 11A, VGS = 10V, RGEN = 9.1Ω 21 5 66 11 47 10 16 15 1.5 42 10 132 22 61 ns ns ns ns nC nC nC A V c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 10A VDS = 10V, ID = 9A 2 0.125 9 1955 355 55 Min 200 1 100 -100 4 0.15 Typ Max Units V µA nA nA V Ω S pF pF pF 6 VDS = 25V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 1mH, IAS = 25A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C 6-2 CEDF640/CEUF640 12 10 8 6 4 2 0 0.0 VGS=10,9,8,7V 32 25 C ID, Drain Current (A) ID, Drain Current (A) 24 -55 C 16 TJ=125 C VGS=6V 8 0 0.5 1.0 1.5 2.0 2.5 3.0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 3000 2500 2000 1500 1000 500 0 Coss Crss 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=10A VGS=10V Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 10 1 VTH, Normalized Gate-Source Threshold Voltage IS, Source-drain current (A) ID=250µA VGS=0V 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEDF640/CEUF640 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=160V ID=15A 10 2 RDS(ON)Limit 10ms 100ms 1ms ID, Drain Current (A) 10 1 DC 10ms 10 0 16 32 48 64 0 TC=25 C TJ=150 C Single Pulse 10 0 6 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 0.1 -1 10 PDM 0.05 0.02 0.01 t1 t2 10 -2 Single Pulse -5 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 6-4